Samsung puts 128-gigabit 3-bit cell flash into production, plans to build more memory cards

Flash memory advancements usually sing the same tune: faster, smaller and high-density. Improve one of these attributes, and you've go the makings of a better chip on your hands. Samsung is focusing on the latter, announcing the mass production of its 10 nanometer 128-gigabit three-bit multi-level-cell NAND flash. That mouthful translates into flash chips with more memory per cell in a small form factor. Sammy says the new chip is capable of 400Mbps, and claims the highest density in the industry. The new silicon will be used to expand the company's supply of 128GB memory cards and high-volume solid state drives. It's also well positioned to be a better part for devices with embedded NAND storage, which Samsung hopes will keep it competitive. You'll find Samsung's announcement and all the granular details after the break.
Filed under: Storage, Samsung
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Source: Samsung Tomorrow